sidc85d170h edite d by infineon technologies ai dp ps d cls , l 4491a , edition 2 , 2. 11 .200 4 fast switching diode chip in emcon 3 - technology this chip is used for: eupec power modules features: 1700v emcon 3 technology 200 m chip soft, fast switching low reverse recovery charge small temperature coefficient applications: resonant applications, drives a c chip type v r i f die size package ordering code sidc85d170h 1700v 150a 9.2 x 9.2 mm 2 sawn on foil q67050 - a4178 - a001 mechanical parameter: raster size 9.2 x 9.2 area total / active 84.64 / 67.8 a node pad size 7.18 x 7.18 mm 2 thickness 200 m wafer size 150 mm flat position 180 deg max. possible chips per wafer 160 pcs passivation frontside photoimide anode metallization 3200 nm al si cu cathode metallization ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
sidc85d170h edite d by infineon technologies ai dp ps d cls , l 4491a , edition 2 , 2. 11 .200 4 maximum ratings parameter symbol condition value unit repetitive peak reverse voltage v rrm 1700 v continuous forward current limited by t jmax i f 150 single pulse forward current (depending on wire bond configuration) i fsm t p = 10 ms sinusoidal 740 maximum repetitive forward current limited by t jmax i frm 300 a operating junction and storage temperature t j , t stg - 55...+150 c static electrical characteristics (tested on chip), t j =25 c, unless otherwise sp ecified value parameter symbol conditions min. typ. max. unit reverse leakage current i r v r =1700v t j =25 c 2 7 a cathode - anode breakdown voltage v br i r =0.25ma t j =25c 1700 v forward voltage drop v f i f =150a t j =25 c 1.8 v dynamic electr ical characteristics , at t j = 25 c, unless otherwise specified, tested at component value parameter symbol conditions min. typ. max. unit i rrm1 t j = 25 c 131 peak recovery current i rrm2 i f =150a di/dt=770 a/ m s v r =900 v t j = 125 c 158 a q rr1 t j =25 c 35.8 reverse recovery charge q rr2 i f =150a di/dt=770 a/ m s v r =900 v t j =125 c 62.3 c e rec 1 t j = 25 c 24.2 peak recovery energy e rec 2 i f =150a di/dt=770 a/ m s v r =900 v t j =125 c 42.9 mj
sidc85d170h edite d by infineon technologies ai dp ps d cls , l 4491a , edition 2 , 2. 11 .200 4 chip drawing:
sidc85d170h edite d by infineon technologies ai dp ps d cls , l 4491a , edition 2 , 2. 11 .200 4 further electrical characteristics: this chip data sheet refers to the device data sheet infineon technologies / eupec tbd description: aql 0,65 for visual inspection according to failure catalog elect rostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag bereich kommunikation st. - martin - strasse 53 d - 81541 mnchen ? infineon technologies ag 2000 all rights reserved. atten tion please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not li mited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in que stion please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain a nd sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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